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◆ LED Type: SMD5050
◆ IC Type: DMX512
◆ Input Voltage: DC12V/DC24V
◆ Color: Digital Color
◆ LED Qty: 30LED/m, 60LED/m
◆ Beam Angle: 120 degree
◆ IP Ratio: IP20, IP67 Version
◆ IP20: Non-waterproof Version
◆ IP67: With Silicone Tube
Specifications:
Different IP version:
Applications:
1. Decorative lighting for festivals, events, shows, exhibitions
2. Architectural lighting for canopy, corridor, window, archway,
3. Backlight or edge light for signage
4. Path or contour marking
5. Channel letter lighting
LED NEW Technology:
Copied from LED NEWS.ORG (www.lednews.org)
AZZURRO developed 1 bin wavelength LED wafer
POSTED ON SEPTEMBER 5, 2013 BY ADMIN IN LED CHIP, NEW TECHNOLOGIES WITH THERE ARE NO COMMENTS
On 26th August 2013, German semiconductor manufacturer Azzurro shows ‘1-bin’ wavelength LED wafer, the technology can produce less than 3nm consistency wavelength LEDs, and obtained the in 1nm development results. The company said the record-breaking1nm technology success shows AZZURRO has ability to make ‘1 bin’ silicon nitride LED wafers.
The company said the brightness and efficiency of silicon nitride wafer can be solved, but volume production still suspend. The huge lattice mismatch and thermal expansion coefficient between GaN and Si will cause the LED wafer highly warpage during the growth, this would have a negative impact on wavelength, forward voltage and output power. AZZURRO uses its proper unique patented engineering and growing techniques to overcome these obstacles.
AZZURRO groundbreaking achievements include: wavelength <3nm or 0.6 percent, forward voltage is 1.3% and an output power is 3.9%, thus greatly eliminates binning process, and lower the silicon substrate cost, also the use of standard production reduces production cost. It also released a high quality crystal blue silicon nitride LED wafer with diameter of 150nm. At the same time, the impressive 200mm LED wafers shows the company’s technical scalability.
The company’s co-founder and CMO, Alexander Loesing, also the leader of LED technology business department, commented: “Our team is very proud of the achievements of 1.0nm, these results prove that our GaN-on-Si technology allows the production of “1 bin” LED wafers goal in LED industry get closer.”